Design of high efficiency multi-GHz SiGe HBT electro-optic modulator.
نویسندگان
چکیده
We design and theoretically analyze a heterojunction bipolar transistor (HBT) electro-optic (EO) modulator with a composition graded SiGe base. The waveguide has a large cross-section of 1 microm for ease of fiber alignment. At a base-emitter bias of V BE = 2.5 V, a pi-phase shift requires 74.5 microm interaction length for TM polarization at lambda = 1.55 microm. The total optical attenuation is 3.9 dB to achieve a pi-phase shift in this condition. This device is expected to operate at a switching speed of 2.4 GHz.
منابع مشابه
Design of a short electro-optic modulator based on SiGe HBT structure.
A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.
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ورودعنوان ژورنال:
- Optics express
دوره 17 16 شماره
صفحات -
تاریخ انتشار 2009